? semiconductor components industries, llc, 2001 october, 2016 ? rev. 3 1 publication order number: ma3075walt1/d ma3075walt1g, SZMA3075WALT1G zener transient voltage suppressor sot?23 dual common anode zeners for esd protection these dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. they are intended for use in voltage and esd sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. their dual junction common anode design protects two separate lines using only one package. these devices are ideal for situations wh ere board space is at a premium. features ? sot?23 package allows two separate unidirectional configurations ? low leakage < 1 a @ 5.0 v ? breakdown voltage: 7.2?7.9 v @ 5 ma ? low capacitance (80 pf typical @ 0 v, 1 mhz) ? esd protection meeting: 16 kv human body model esd protection meeting: 30 kv air and contact discharge ? sz prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant mechanical characteristics: ? void free, transfer?molded, thermosetting plastic case ? corrosion resistant finish, easily solderable ? package designed for optimal automated board assembly ? small package size for high density applications maximum ratings rating symbol value unit peak power dissipation @ 100 s (note 1) p pk 15 w steady state power dissipation derate above 25 c (note 2) p d 225 1.8 mw mw/ c thermal resistance, junction?to?ambient r ja 556 c/w maximum junction temperature r ja 417 c/w operating junction and storage temperature range t j , t stg ? 55 to +150 c esd discharge mil std 883c ? method 3015?6 iec61000?4?2, air discharge iec61000?4?2, contact discharge v pp 16 30 30 kv stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. non?repetitive 100 s pulse width 2. mounted on fr?5 board = 1.0 x 0.75 x 0.062 in. sot?23 case 318 style 12 1 3 2 1 pin 1. cathode 2. cathode 3. anode device package shipping ? ordering information marking diagram ma3075wal t1g sot?23 (pb?free) 3000 / tape & reel 1 7w5 m 7w5 = specific device code m = date code* = pb?free package *date code orientation and/or overbar may vary depending upon manufacturing location. (note: microdot may be in either location) ? for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification s brochure, brd8011/d. www. onsemi.com szma3075wal t1g sot?23 (pb?free) 3000 / tape & reel
ma3075walt1g, SZMA3075WALT1G www. onsemi.com 2 electrical characteristics parameter symbol conditions min typ max unit forward voltage v f i f = 10 ma 0.8 0.9 v zener voltage *2 v z i z = 5 ma 7.2 7.5 7.9 v operating resistance r zk i z = 0.5 ma 120 r z i z = 5 ma 6 15 reverse current i r1 v r = 5 v 1 a i r2 v r = 6.5 v 60 a temperature coefficient of zener voltage *3 s z i z = 5 ma 2.5 4.0 5.3 mv/ c terminal capacitance c t v r = 0 v 80 pf product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. t r 0 25 50 75 100 125 150 175 300 250 200 150 100 50 0 figure 1. steady state power derating curve temperature ( c) 0 2040 608 0 100 60 50 30 20 10 0 figure 2. 8 x 20 s pulse waveform t, time ( s) p d , power dissipation (mw) % of peak pulse current 40 90 80 70 peak value i rsm @ 8 s half value i rsm /2 @ 20 s pulse width (t p ) is defined as that point where the peak current decay = 8 s t p 10 100 1000 1000 100 10 1 figure 3. pulse rating curve t p , pulse width ( s) 0 0.2 0.4 0.6 1.2 100 1 0.1 0.01 figure 4. forward current versus forward voltage v f , forward voltage (v) p pk , peak power (w) i f , forward current (ma) 10 0.8 1 t a = 85 c ?40 c 25 c uni?directional tvs i pp i f v i i r i t v rwm v c v br v f
ma3075walt1g, SZMA3075WALT1G www. onsemi.com 3 ?60 20 100 1.2 0.8 0.4 0 figure 5. forward voltage versus temperature t a , ambient temperature ( c) 01 2 3 8 1000 1 0.1 0.01 figure 6. leakage current versus reverse voltage v r , reverse voltage (v) v f , forward voltage (v) i r , leakage current (na) 10 45 t a = 85 c ?40 c 25 c 0.2 0.6 1 ?40 ?20 0 40 60 80 i f = 100 ma 10 ma 3 ma 100 67 ?60 20 100 1000 1 0.1 figure 7. leakage current versus temperature t a , ambient temperature ( c) 5.5 6 6.5 100 0.1 0.01 0.001 figure 8. zener current versus zener voltage v z , zener voltage (v) i r , leakage current (na) i z , zener current (ma) 1 7 7.5 t a = ?40 c 85 c 25 c 10 100 ?40 ?20 0 40 60 80 v r = 6 v 10 88. 5 v r = 5 v v r = 1 v 01 90 50 10 0 figure 9. capacitance v r , reverse voltage (v) 0.1 1 10 0 100 1 0.1 figure 10. operating resistance versus zener current i z , zener current (ma) cd, capacitance (pf) r z , operating resistance ( ) 10 10 2345678 20 30 40 60 70 80 f = 1 mhz t a = 25 c
ma3075walt1g, SZMA3075WALT1G www. onsemi.com 4 sot?23 (to?236) case 318?08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. style 12: pin 1. cathode 2. cathode 3. anode on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular pu rpose, nor does on semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without li mitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, regulatio ns and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semicond uctor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typicals? mus t be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the rights of others. on semiconduc tor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or si milar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, cost s, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer . this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ma3075walt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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